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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC1173
DESCRIPTION ·Low Collector Saturation Voltage ·Complement to Type 2SA473 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications ·Car radio,car stereo output stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
30
V
VCEO Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
3
A
10
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX 12.
2SC1173 Datasheet
