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2SB669 - PNP Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -70V(Min) High DC Current Gain : hFE= 2000(Min) @IC= -1A Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and switching

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isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB669 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -70V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= -1A ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -70 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICP Collector Current-Peak -6 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.
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