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2SB668 - PNP Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) High DC Current Gain : hFE= 2000(Min) @IC= -0.5A Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and switch

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isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB668 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= -0.
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