Datasheet4U Logo Datasheet4U.com

2SB1366 - PNP Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) Collector Power Dissipation- : PC= 25 W@ TC= 25℃ Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -2A, IB= -0.2A) Complement to Type 2SD2058 Minimum Lot-to-Lot variations for robust device performance a

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SB1366 TRANSISTOR Korea Electronics
2SB1366 SILICON POWER TRANSISTOR SavantIC
2SB1361 Silicon PNP Transistor Panasonic Semiconductor
2SB1361 SILICON POWER TRANSISTOR SavantIC
2SB1362 SILICON POWER TRANSISTOR SavantIC

Other Datasheets by Inchange Semiconductor

Part Number Description
2SB1361 PNP Transistor
2SB1362 PNP Transistor
2SB1367 PNP Transistor
2SB1368 PNP Transistor
2SB1369 PNP Transistor

Full PDF Text Transcription

Click to expand full text
isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Collector Power Dissipation- : PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -2A, IB= -0.2A) ·Complement to Type 2SD2058 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -0.
Published: |