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2SB1361 - PNP Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) Wide Area of Safe Operation Complement to Type 2SD2052 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for high power amplifications.

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isc Silicon PNP Power Transistor 2SB1361 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SD2052 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -9 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -15 A 100 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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