2N3906S
DESCRIPTION
- Low voltage( max .40V )
- Low current ( max .200m A )
APPLICATIONS
- Designed for high-speed switching
- Amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Ptot
Total Power Dissipation
Junction Temperature
Tstg
Storage Temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a thermal resistance from junction to ambient
VALUE -40 -40 -5 -200 300
-55~150 -55~150
UNIT V V V m A m W ℃ ℃
MAX 250
UNIT K/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-base breakdown voltage
IC=-10m A,...
