Download 2N3902 Datasheet PDF
Inchange Semiconductor
2N3902
DESCRIPTION - Excellent Safe Operating Area - Low Collector-Emitter Saturation Voltage - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS - Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEX Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation@TC=25℃ Operating Temperature Range -65~+150 ℃ Tstg Storage Junction Temperature Range -65~+200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.75 ℃/W 2N3902 isc website:.iscsemi. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS...