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IDT71V25761S - 128K x 36 3.3V Synchronous SRAMs

Download the IDT71V25761S datasheet PDF. This datasheet also covers the IDT71V25761YS variant, as both devices belong to the same 128k x 36 3.3v synchronous srams family and are provided as variant models within a single manufacturer datasheet.

Description

The IDT71V25761 are high-speed SRAMs organized as 128K x 36.

The IDT71V25761 SRAMs contain write, data, address and control registers.

Features

  • 128K x 36 memory configuration.
  • Supports high system speed: Commercial:.
  • 200MHz 3.1ns clock access time Commercial and Industrial:.
  • 183MHz 3.3ns clock access time.
  • 166MHz 3.5ns clock access time.
  • LBO input selects interleaved or linear burst mode.
  • Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx).
  • 3.3V core power supply.
  • Power down controlled by ZZ input.
  • 2.5V I/O.
  • Optional - B.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IDT71V25761YS-IDT.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number IDT71V25761S
Manufacturer IDT
File Size 261.85 KB
Description 128K x 36 3.3V Synchronous SRAMs
Datasheet download datasheet IDT71V25761S Datasheet

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Other Datasheets by IDT

Part Number Description
IDT71V25761 (IDT71V25761 / IDT71V25781) Synchronous SRAMs
IDT71V25761YS 128K x 36 3.3V Synchronous SRAMs
IDT71V2577 (IDT71V2577 / IDT71V2579) Synchronous SRAMs
IDT71V2577S (IDT71V2577S / IDT71V25779) Synchronous SRAMs
IDT71V2577SA (IDT71V2577S / IDT71V25779) Synchronous SRAMs

Full PDF Text Transcription

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128K X 36 IDT71V25761YS/S 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Features ◆ 128K x 36 memory configuration ◆ Supports high system speed: Commercial: – 200MHz 3.1ns clock access time Commercial and Industrial: – 183MHz 3.3ns clock access time – 166MHz 3.5ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ 3.3V core power supply ◆ Power down controlled by ZZ input ◆ 2.5V I/O ◆ Optional - Boundary Scan JTAG Interface (IEEE 1149.
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