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IC-DN - LOWSIDE SWITCH

Download the IC-DN datasheet PDF. This datasheet also covers the IC-DN_IC variant, as both devices belong to the same lowside switch family and are provided as variant models within a single manufacturer datasheet.

Description

iC-DN is a monolithic lowside switch for ohmic, inductive and capacitive loads.

Designed for a wide input voltage range of 4 to 36 V, it is capable of supplying a minimum output current of 200 mA.

Features

  • o 36 V lowside switch/level shifter o Decoupling of input and output reference voltages (SOT23-6L) permits control by 5V logic o 200 mA of output current o Short-circuit protected o Output with an active freewheeling circuit o On-chip over-temperature protection with hysteresis o 4 to 36 V input voltage range o Input with hysteresis o 3-pin configuration possible o Wide temperature range of -40 to 120 °C o Package option on request: (SC59-3L, CSP, DFN).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IC-DN_IC-Haus.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number IC-DN
Manufacturer IC-Haus
File Size 256.41 KB
Description LOWSIDE SWITCH
Datasheet download datasheet IC-DN Datasheet

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Full PDF Text Transcription

Click to expand full text
iC-DN LOWSIDE SWITCH ar y n i im prel Rev B1, Page 1/7 APPLICATIONS o Lowside switch for industrial applications, such as relays, inductive proximity sensors and light barriers FEATURES o 36 V lowside switch/level shifter o Decoupling of input and output reference voltages (SOT23-6L) permits control by 5V logic o 200 mA of output current o Short-circuit protected o Output with an active freewheeling circuit o On-chip over-temperature protection with hysteresis o 4 to 36 V input voltage range o Input with hysteresis o 3-pin configuration possible o Wide temperature range of -40 to 120 °C o Package option on request: (SC59-3L, CSP, DFN) PACKAGES SOT23-6L BLOCK DIAGRAM PI iC-DN INPUT INTERFACE DN 200 mA & Tj < 120°C temperature monitor LOW-SIDE SWITCH 3.
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