Datasheet4U Logo Datasheet4U.com

HY512264LTC - Extended Data Out mode 4M bit dynamic RAM

Download the HY512264LTC datasheet PDF. This datasheet also covers the HY512264 variant, as both devices belong to the same extended data out mode 4m bit dynamic ram family and are provided as variant models within a single manufacturer datasheet.

Description

This family is a 4M bit dynamic RAM organized 131,072 x 16-bit configuration with CMOS DRAMs.

The circuit and process design allow this device to achieve high performance and low power dissipation.

In dependant read and write of upper and lower byte is controlled by 2 separate /CAS inputs.

Features

  • are access time(50, 60 or 70ns), package type(SOJ, TSOP-II), and power onsumption (Normal or Low power with self refresh). Hyundai’s advanced circuit design and process technology allow this device to achieve high bandwidth, low power consumption and high reliability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY512264-HyundaiElectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY512264LTC
Manufacturer Hyundai Electronics
File Size 88.55 KB
Description Extended Data Out mode 4M bit dynamic RAM
Datasheet download datasheet HY512264LTC Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HY5100 2 Input / 3 Output Digital Delay Line Hytek
HY510N PC POWER SUPPLY SUPERVISOR HawYang
HY5110A N-Channel Enhancement Mode MOSFET HUAYI
HY5110NA2W N-Channel Enhancement Mode MOSFET HUAYI
HY5110W N-Channel Enhancement Mode MOSFET HUAYI

Other Datasheets by Hyundai Electronics

Part Number Description
HY512264LJC Extended Data Out mode 4M bit dynamic RAM
HY512264 Extended Data Out mode 4M bit dynamic RAM
HY512264JC Extended Data Out mode 4M bit dynamic RAM
HY512264SLJC Extended Data Out mode 4M bit dynamic RAM
HY512264SLTC Extended Data Out mode 4M bit dynamic RAM

Full PDF Text Transcription

Click to expand full text
HY512264 128Kx16, Extended Data Out mode DESCRIPTION This family is a 4M bit dynamic RAM organized 131,072 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. In dependant read and write of upper and lower byte is controlled by 2 separate /CAS inputs. Optional features are access time(50, 60 or 70ns), package type(SOJ, TSOP-II), and power onsumption (Normal or Low power with self refresh). Hyundai’s advanced circuit design and process technology allow this device to achieve high bandwidth, low power consumption and high reliability.
Published: |