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HY62KT08081E - 32Kx8bit CMOS SRAM

Description

and is subject to change without notice.

Hynix Electronics does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Features

  • Fully static operation and Tri-state output TTL compatible inputs and outputs Low power consumption Battery backup(L/LL-part) - 2.0V(min. ) data retention.
  • Standard pin configuration - 28 pin 600mil PDIP - 28 pin 330mil SOP - 28 pin 8x13.4 mm TSOP-I (Standard) Standby Current(uA) LL-Part 5 8 8 5 8 8 5 8 8 Temperature (°C) 0~70(Normal) -25~85(Extended) -40~85(Extended) 0~70(Normal) -25~85(Extended) -40~85(Extended) 0~70(Normal) -25~85(Extended) -40~.

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Other Datasheets by SK Hynix

Part Number Description
HY62KF08401C 512Kx8bit full CMOS SRAM
HY62KF08802B 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM
HY62KF08802B-DD 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM
HY62KF08802B-DDI 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM
HY62KF08802B-SD 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM

Full PDF Text Transcription

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HY62K(U,V)T08081E Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 2.7~3.3V / 3.0~3.6V / 2.7~3.6V Low Power Slow SRAM Revision History Revision No 00 www.DataSheet4U.com History Initial Merged 3.0V/3.3V SPEC Revised - Marking Information Change : SOP Type - Voh Limit Change : 2.4V => 2.2V @2.7~3.6V Changed Logo - HYUNDAI -> hynix - Marking Information Change Draft Date Jan.20.2000 Remark Final 01 Feb.21.2001 Final 02 Apr.30.2001 Final This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 02 / Apr.
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