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HY62KF08401C - 512Kx8bit full CMOS SRAM

Description

and is subject to change without notice.

Hynix Electronics does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Features

  • Fully static operation and Tri-state output.
  • TTL compatible inputs and outputs.
  • Battery backup -. 1.2V(min) data retention.
  • Standard pin configuration -. 32 - sTSOP - 8X13.4(Standard) Product No. HY62KF08401C-I Voltage (V) 2.7~3.6 Speed (ns) 55/70 Operation Current/Icc(mA) 5 Standby Current(uA) LL SL 15 6 Temperature (°C) -40~85 Note 1. I : Industrial 2. Current value is max. PIN.

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Other Datasheets by SK Hynix

Part Number Description
HY62KF08802B 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM
HY62KF08802B-DD 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM
HY62KF08802B-DDI 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM
HY62KF08802B-SD 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM
HY62KF08802B-SDI 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM

Full PDF Text Transcription

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HY62KF08401C Series 512Kx8bit full CMOS SRAM Document Title 512K x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 www.DataSheet4U.com Initial Draft Mar.21.2001 Final 01 Changed Isb1 values Jun.07.2001 Final This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.01 / Jun.01 Hynix Semiconductor HY62KF08401C Series DESCRIPTION The HY62KF08401C is a high speed, super low power and 4Mbit full CMOS SRAM organized as 512K words by 8bits. The HY62KF08401C uses high performance full CMOS process technology and is designed for high speed and low power circuit technology.
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