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HY5R256HC745 - RDRAM

Description

and is subject to change without notice.

Hynix Semiconductor Inc.

does not assume any responsibility for use of circuits described.

Features

  • for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage and bandwidth or for error correction. Figure 1: Direct RDRAM uBGA Package The 256/288-Mbit Direct RDRAMs are offered in a uBGA package suitable for desktop as well as low-profile add-in card and mobile.

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Other Datasheets by SK Hynix

Part Number Description
HY5R256HCxxx RDRAM
HY5R288HC745 RDRAM
HY5R288HCxxx RDRAM
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HY5R128HCxxx (HY5R1xxHCxxx) RDRAM

Full PDF Text Transcription

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Direct RDRAM™ 256/288-Mbit (512Kx16/18x32s) Preliminary Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The 256/288-Mbit Direct Rambus DRAMs (RDRAM)are extremely high-speed CMOS DRAMs organized as 16M words by 16 or 18 bits. The use of Rambus Signaling Level (RSL) technology permits 600MHz to 800MHz transfer www.DataSheet4U.com rates while using conventional system and board design technologies. Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10ns per sixteen bytes).
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