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HY57V658020B - 4 Banks x 2M x 8Bit Synchronous DRAM

Description

The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.

HY57V658020B is organized as 4banks of 2,097,152x8.

Features

  • Single 3.3±0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by DQM Internal four banks operation.
  • Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full page for Sequential Burst.
  • - 1, 2, 4 o.

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Datasheet Details

Part number HY57V658020B
Manufacturer SK Hynix
File Size 146.35 KB
Description 4 Banks x 2M x 8Bit Synchronous DRAM
Datasheet download datasheet HY57V658020B Datasheet

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Full PDF Text Transcription

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HY57V658020B 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x8. HY57V658020B is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output voltage levels are compatible with LVTTL.
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