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H57V2622GMR - 256Mb Dual Die Synchronous DRAM

Description

and is subject to change without notice.

Hynix does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Features

  • Standard SDRAM Protocol Uses 2pcs of 128Mb Monolithic Die Power Supply Voltage : VDD = 3.3V, VDDQ = 3.3V All device pins are compatible with LVTTL interface 4096 Refresh cycles / 64ms Programmable CAS latency of 2 or 3 Programmable Burst Length and Burst Type Operating Temp. - Commercial Temp. : 0oC ~ 70oC, Industrial Temp. : -40oC ~ 85oC.
  • This product is in compliance with the directive pertaining of RoHS.

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Datasheet Details

Part number H57V2622GMR
Manufacturer SK Hynix
File Size 394.20 KB
Description 256Mb Dual Die Synchronous DRAM
Datasheet download datasheet H57V2622GMR Datasheet

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www.DataSheet4U.com 256Mb : x32 Dual Die Synchronous DRAM 256M (8Mx32bit) Hynix SDRAM Memory This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.0 / Oct. 2009 1 www.DataSheet4U.com 111 Synchronous DRAM Memory 256Mbit H57V2622GMR Series Document Title 256Mbit (8M x32) Synchronous DRAM Revision History Revision No. 0.1 1.0 History Initial Draft Release Draft Date Sep. 2009 Oct. 2009 Remark Preliminary Rev 1.0 / Oct. 2009 2 www.DataSheet4U.
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