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H55S5122EFR-75M - 512Mbit (16Mx32bit) Mobile SDR Memory

Download the H55S5122EFR-75M datasheet PDF. This datasheet also covers the H55S5122EFR variant, as both devices belong to the same 512mbit (16mx32bit) mobile sdr memory family and are provided as variant models within a single manufacturer datasheet.

Description

and is subject to change without notice.

Hynix does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Features

  • Standard SDRAM Protocol Clock Synchronization Operation - All the commands registered on positive edge of basic input clock (CLK).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H55S5122EFR-HynixSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by SK Hynix

Part Number Description
H55S5122EFR-60M 512Mbit (16Mx32bit) Mobile SDR Memory
H55S5122EFR-A3M 512Mbit (16Mx32bit) Mobile SDR Memory
H55S5122EFR 512Mbit (16Mx32bit) Mobile SDR Memory
H55S5132EFR 512Mbit (16Mx32bit) Mobile SDR Memory
H55S5132EFR-60M 512Mbit (16Mx32bit) Mobile SDR Memory

Full PDF Text Transcription

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512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M (16Mx32bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.2 / Sep. 2010 1 il;o;nar 512Mbit (16Mx32bit) Mobile SDR Memory H55S5122EFR Series / H55S5132EFR Series Document Title 4Bank x 4M x 32bits Synchronous DRAM Revision History Revision No. History Draft Date Remark 1.0 1.1 1.2 - First Version Release - Add AC Overshoot/Undershoot Specification - Correction Feb. 2010 Feb. 2010 Sep. 2010 Rev 1.2 / Sep.
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