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H5551 - NPN SILICON TRANSISTOR

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Part number H5551
Manufacturer SHANTOU HUASHAN ELECTRONIC DEVICES
File Size 113.13 KB
Description NPN SILICON TRANSISTOR
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Other Datasheets by SHANTOU HUASHAN ELECTRONIC DEVICES

Part Number Description
H557 NPN SILICON TRANSISTOR
H558 NPN SILICON TRANSISTOR

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N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H5551 ¨€ AMPLIFIER TRANSISTOR Collector-Emitter Voltage:Vceo=160V. CollectorDissipation:Pc(max)=625mW ¨€ T stg ¡ ª Tj¡ª ABSOLUTE MAXIMUM RATINGS£¨ Storage Temperature¡ - ¡ Junction Temperature¡ - ¡ - ¡ - ¡ - ¡ Collector Dissipation¡- ¡Collector-Base Voltage¡-¡ Collector-Emitter Voltage¡-¡ Emitter-Base Voltage¡ Collector Current¡- ¡- ¡¡-¡-¡¡- ¡¡¡- ¡¡- ¡- ¡¡-¡¡-¡-¡¡- ¡¡-¡¡¡¡- ¡¡- ¡- ¡¡¡- ¡¡- Ta=25¡æ£© -55~150¡æ 150¡æ 625mW 180V 160V ¡ - 6V 600mA TO-92 www.DataSheet4U.
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