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HTD200P03 - 30V P-Ch Power MOSFET

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Part number HTD200P03
Manufacturer Hunteck
File Size 861.53 KB
Description 30V P-Ch Power MOSFET
Datasheet download datasheet HTD200P03 Datasheet

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HTD200P03 Feature ◇ High Speed Power Switching, Logic Level ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Telecoms and Inductrial Part Number HTD200P03 Package Marking TO-252 TD200P03 P-1 30V P-Ch Power MOSFET VDS -30 V RDS(on),typ VGS=10V 17 mΩ RDS(on),typ VGS=4.5V 25 mΩ ID (Sillicon Limited) -35 A TO-252 2 13 Drain Gate Src Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified) Parameter Symbol Conditions Continuous Drain Current (Silicon Limited) Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature ID VDS VGS IDM EAS PD TJ, Tstg TC=25℃ TC=100℃ L=0.
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