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HTD070N04
Feature ◇ High Speed Power Switching, Logic Level ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free
Application ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Telecoms and Inductrial
Part Number HTD070N04
Package Marking TO-252 TD070N04
P-1
40V N-Ch Power MOSFET
VDS RDS(on),typ VGS=10V ID (Sillicon Limited)
40 V 6 mΩ 55 A
TO-252
2 13
Drain Gate
Src
Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified)
Parameter
Symbol
Conditions
Continuous Drain Current (Silicon Limited)
Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature
ID
VDS VGS IDM EAS PD TJ, Tstg
TC=25℃ TC=100℃ L=0.
HTD070N04 Datasheet
