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Silicon N-Channel Power MOSFET
CS730F A9H
○R
General Description：
CS730F A9H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching performance
and enhance the avalanche energy. The transistor can be used in
various power switching circuit for system miniaturization and
higher efficiency. The package form is TO-220F, which accords
with the RoHS standard.
Features：
l Fast Switching l Low ON Resistance(Rdson≤1Ω) l Low Gate Charge (Typical Data:13nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of electron ballast and adaptor.
CS730FA9H Datasheet
