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Silicon N-Channel Power MOSFET
CS730 A4RD
○R
General Description：
CS730 A4RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard.
Features：
l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:14.5nC) l Low Reverse transfer capacitances(Typical:7.5pF) l 100% Single Pulse avalanche energy Test
VDSS ID PD(TC=25℃) RDS(ON)Typ
400 V 6A 75 W
0.75 Ω
Applications：
Power switch circuit of electron ballast and adaptor.
CS730A4RD Datasheet
