Datasheet4U Logo Datasheet4U.com

CS5N65FA9H - Silicon N-Channel Power MOSFET

General Description

enhance the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤1.9Ω) l Low Gate Charge (Typical Data:19nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test.

📥 Download Datasheet

Datasheet Details

Part number CS5N65FA9H
Manufacturer Huajing Microelectronics
File Size 828.72 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS5N65FA9H Datasheet

More Datasheets from Huajing Microelectronics

Part Number Description
CS5N65A3 Silicon N-Channel Power MOSFET
CS5N65A4 Silicon N-Channel Power MOSFET
CS5N65A7H Silicon N-Channel Power MOSFET
CS5N65A8H Silicon N-Channel Power MOSFET
CS5N20A3 Silicon N-Channel Power MOSFET
CS5N20A4 Silicon N-Channel Power MOSFET
CS5N20FA9 Silicon N-Channel Power MOSFET
CS5N70A4 Silicon N-Channel Power MOSFET
CS5N70FA9 Silicon N-Channel Power MOSFET
CS5N90ARH-G Silicon N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon N-Channel Power MOSFET CS5N65F A9H ○R General Description： CS5N65F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and VDSS ID PD(TC=25℃) RDS(ON)Typ 650 5 32 1.6 enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤1.9Ω) l Low Gate Charge (Typical Data:19nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.