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CS5N70A4 - Silicon N-Channel Power MOSFET

Description

the avalanche energy.

Features

  • l Fast Switching l Low ON Resistance(Rdson≤2.2Ω) l Low Gate Charge (Typical Data:18.6nC) l Low Reverse transfer capacitances(Typical:6.6pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS5N70A4
Manufacturer Huajing Microelectronics
File Size 837.86 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS5N70A4 Datasheet

Full PDF Text Transcription

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Silicon N-Channel Power MOSFET CS5N70 A4 ○R General Description: CS5N70 A4,the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features: l Fast Switching l Low ON Resistance(Rdson≤2.2Ω) l Low Gate Charge (Typical Data:18.6nC) l Low Reverse transfer capacitances(Typical:6.6pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger.
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