MBM500E33E2-R - Silicon N-channel IGBT

Product Overview

Hitachi

Part number	MBM500E33E2-R
Manufacturer	Hitachi
File Size	556.83 KB
Description	Silicon N-channel IGBT
Datasheet	MBM500E33E2-R Datasheet
Additional preview pages of the MBM500E33E2-R datasheet.

 Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT.  Low driving power due to low input capacitance MOS gate.  Low noise recovery: Ultra soft fast recovery diode.  High thermal fatigue durability: (delta Tc=70K, N30,000cycles) AlSiC base-plate/AlN substrate.

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Published: Jul 13, 2016 |