MBM200GS12AW
IGBT MODU ODULE
Silicon N-channel IGBT OUTLINE DRAWING
Unit in mm
94 80 16
E2
FEAT RES EATURES
- High speed and low saturation voltage.
- low noise due to built-in free-wheeling diode
- ultra soft fast recovery diode(USFD).
- Isolated head sink (terminal to base).
3-M5 2- φ5.6
G2
4-Fast-on Terminal #110
C1
E2
C2E1
E1 G1
23 39.5 φ0.8
7 12 30
C2E1 G2 E2 E2 C1 E1 G1
Weight: 265 (g)
TERMINALS
ABSOLUTE MAXIMUM RATINGS (Tc=25°C ) Item
Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current
Symbol
VCES VGES IC ICp IF IFM Pc Tj Tstg VISO
- Unit
V V A A W °C °C VRMS N.m (kgf.cm)
1,200 ±20 200 400 200 (1) 400 1,000 -40 ~ +150 -40 ~ +125 2,500(AC 1 minute) 1.96(20) (2) 1.96(20) (3)
DC 1ms DC 1ms
Collector Power Dissipation Junction Temperature Storage Temperature Isolation Voltage Screw Torque Terminals Mounting
Notes:(1)RMS Current of Diode 60Arms max. (2)(3)Remended Value 1.67N.m(17kgf.cm)
CHARACTERISTICS...
