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HE8811 - GaAlAs Infrared Emitting Diode

Description

The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure.

It is high brightness, high output power and fast response make it suitable as a light source in measuring instruments and infrared-beam communication equipment.

Features

  • High-frequency response.
  • High efficiency and high output power.
  • Broad radiation pattern Package Type.
  • HE8811: SG1 Internal Circuit 1 2 HE8811 Absolute Maximum Ratings (TC = 25°C) Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Value 200 3.
  • 20 to +60.
  • 40 to +90 Unit mA V °C °C Optical and Electrical Characteristics (TC = 25°C) Item Optical output power Peak wavelength Spectral width Forwa.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

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www.DataSheet4U.com HE8811 GaAlAs Infrared Emitting Diode ODE-208-999B (Z) Rev.2 Mar. 2005 Description The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure. It is high brightness, high output power and fast response make it suitable as a light source in measuring instruments and infrared-beam communication equipment.
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