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HE8807SG - (HE8807FL/SG) GaAlAs Infrared Emitting Diodes

Download the HE8807SG datasheet PDF. This datasheet also covers the HE8807FL variant, as both devices belong to the same (he8807fl/sg) gaalas infrared emitting diodes family and are provided as variant models within a single manufacturer datasheet.

Description

The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm.

Features

  • High output, high efficiency Narrow spectral width Sharp radiation directivity (HE8807FL) Wide radiation directivity (HE8807SG) High reliability Absolute Maximum Ratings (TC = 25°C) Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Rated Value 200 3.
  • 20 to +85.
  • 40 to +100 Units mA V °C °C 245 HE8807SG/FL Optical and Electrical Characteristics (TC = 25°C) Item Optical output po.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HE8807FL_HitachiSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
HE8807FL (HE8807FL/SG) GaAlAs Infrared Emitting Diodes
HE8812SG GaAlAs Infrared Emitting Diode

Full PDF Text Transcription

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www.DataSheet4U.com HE8807SG/FL GaAlAs Infrared Emitting Diodes Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm.
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