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BB404M - Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Key Features

  • Build in Biasing Circuit; To reduce using parts cost & PC board space.
  • High gain; (PG = 29 dB typ. at f = 200 MHz).
  • Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz).
  • Wide supply voltage range; Applicable with 5V to 9V supply voltage.
  • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
  • Provide mini mold packages; MPAK-4R(SOT-143 var. ) Outline MPAK-4R 3 4 2 1 1. Source 2. Drain.

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BB404 Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BB404M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-717A (Z) 2nd. Edition Dec. 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) • Wide supply voltage range; Applicable with 5V to 9V supply voltage. • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4R(SOT-143 var.) Outline MPAK-4R 3 4 2 1 1. Source 2. Drain 3. Gate2 4. Gate1 Notes: 1. Marking is “DX–”. 2. BB404M is individual type number of HITACHI BBFET.