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BB402M - Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Key Features

  • Build in Biasing Circuit; To reduce using parts cost & PC board space.
  • Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz).
  • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions.
  • Provide mini mold packages; MPAK-4R(SOT-143 var. ) Outline MPAK-4R 3 4 2 1 1. Source 2. Drain 3. Gate2 4. Gate1 Notes: 1. Marking is “BX.
  • ”. 2. BB402M is individual type number of.

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BB402M Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-716A (Z) 2nd. Edition Dec. 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4R(SOT-143 var.) Outline MPAK-4R 3 4 2 1 1. Source 2. Drain 3. Gate2 4. Gate1 Notes: 1. Marking is “BX–”. 2. BB402M is individual type number of HITACHI BBFET.