4V gate drive device can be driven from 5V source
Outline
TO.
220AB
D
G
1 2 S 3
1. Gate 2. Drain(Flange) 3. Source
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2SK3228
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage tempera.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K3228. For precise diagrams, and layout, please refer to the original PDF.
2SK3228 Silicon N Channel MOS FET High Speed Power Switching ADE-208-765A(Z) Target specification 2nd. Edition December 1998 Features • Low on-resistance R DS(on) =6mΩ ty...
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d. Edition December 1998 Features • Low on-resistance R DS(on) =6mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source Outline TO–220AB D G 1 2 S 3 1. Gate 2. Drain(Flange) 3. Source http://www.Datasheet4U.com 2SK3228 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse)* I DR I AP * 3 3 2 1 Ratings 80 ±20 75 300 75 50 181 100 150 –55 to +150 Unit V V A A A A mJ
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K3228 Datasheet
