4V gate drive device can be driven from 5V source
Outline
TO.
220FM
D
G
1 2 S
1. Gate 2. Drain 3. Source
3
Free Datasheet http://www. Datasheet-PDF. com/
2SK3209
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Stora.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K3209. For precise diagrams, and layout, please refer to the original PDF.
2SK3209 Silicon N Channel MOS FET High Speed Power Switching ADE-208-759(Z) Target Specification 1st. Edition December 1998 Features • Low on-resistance R DS =35mΩ typ. •...
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. Edition December 1998 Features • Low on-resistance R DS =35mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 Free Datasheet http://www.Datasheet-PDF.com/ 2SK3209 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 150 ±20 25 100 25 25 46 35 150 –55 to +150
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K3209 Datasheet
