4 V gate drive device
Can be driven from 5 V source.
Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
November 1996
LDPAK
4
4
123 D
12 3
G S
1. Gate 2. Drain 3. Source 4. Drain
2SK1622(L), 2SK1622(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode rever.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K1622. For precise diagrams, and layout, please refer to the original PDF.
2SK1622(L), 2SK1622(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate...
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ow on-resistance • High speed switching • Low drive current • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline November 1996 LDPAK 4 4 123 D 12 3 G S 1. Gate 2. Drain 3. Source 4. Drain 2SK1622(L), 2SK1622(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW≤10 µs, duty cycle ≤ 1% 2.
More Datasheets from Hitachi Semiconductor (now Renesas)
K1622 Datasheet
