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HSM88ASR - Silicon Schottky Barrier Diode for Balanced Mixer

Features

  • Proof against high voltage.
  • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM88ASR Laser Mark C3 Package Code MPAK Outline 3 2 1 (Top View) 1 Anode 1 2 Cathode 2 3 Cathode 1 Anode 2 HSM88ASR Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 10 15 125.
  • 55 to +125 Unit V mA °C °C Electrical Cha.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HSM88ASR Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-047D (Z) Rev 4 Jul 1998 Features • Proof against high voltage. • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM88ASR Laser Mark C3 Package Code MPAK Outline 3 2 1 (Top View) 1 Anode 1 2 Cathode 2 3 Cathode 1 Anode 2 HSM88ASR Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 10 15 125 –55 to +125 Unit V mA °C °C Electrical Characteristics (Ta = 25°C) Item Forward voltage Symbol Min VF1 VF2 Reverse current I R1 I R2 Capacitance Capacitance deviation Forward voltage deviation ESD-Capability *1 Typ — — — — — — — — Max 420 580 0.2 10 0.85 0.
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