HSM83 - Silicon Epitaxial Planar Diode for High Voltage Switching
Hitachi Semiconductor (now Renesas)
Features
High reverse voltage. (VR = 250V).
MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information
Type No. HSM83 Laser Mark F7 Package Code MPAK
Outline
3
2
1
(Top View)
1 NC 2 Anode 3 Cathode
HSM83
Absolute Maximum Ratings (Ta = 25°C)
Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Junction temperature Storage temperature Note: Symbol VRM VR I F.
Silicon Schottky Barrier Diode for System Protection
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HSM83
Silicon Epitaxial Planar Diode for High Voltage Switching
ADE-208-091D(Z) Rev 4 Jun. 1996 Features
• High reverse voltage. (VR = 250V) • MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HSM83 Laser Mark F7 Package Code MPAK
Outline
3
2
1
(Top View)
1 NC 2 Anode 3 Cathode
HSM83
Absolute Maximum Ratings (Ta = 25°C)
Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Junction temperature Storage temperature Note: Symbol VRM VR I FM I FSM IO Tj Tstg
*1
Value 300 250 300 2 100 125 –55 to +125
Unit V V mA A mA °C °C
1. Value at duration of 10msec.
HSM83 Datasheet
