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HM62W4100H - 4M High Speed SRAM (1-Mword x 4-bit)

Description

The HM62W4100H is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit.

It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit designing technology.

Features

  • Single supply : 3.3 V ± 0.3 V.
  • Access time 12/15 ns (max).
  • Completely static memory  No clock or timing strobe required.
  • Equal access and cycle times.
  • Directly TTL compatible  All inputs and outputs.
  • Operating current : 180/160 mA (max).
  • TTL standby current : 60/50 mA (max).
  • CMOS standby current : 5 mA (max) : 1 mA (max) (L-version).
  • Data retension current : 0.6 mA (max) (L-version).
  • Data retension volta.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HM62W4100H Series 4M High Speed SRAM (1-Mword × 4-bit) ADE-203-774D (Z) Rev. 1.0 Sep. 15, 1998 Description The HM62W4100H is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system. The HM62W4100H is packaged in 400-mil 32-pin SOJ for high density surface mounting. Features • Single supply : 3.3 V ± 0.
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