SFD9N65 - 9A 650V N-CHANNEL MOSFET

HiSemicon

General Description

These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, DMOS technology.

Key Features

VDS(V)=650V, ID=9A.
RDS(ON) TYP:0.88Ω@VGS=10V ID=4.5A MAX:1.0Ω.

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SFD9N65 9a 650v n-channel mosfet by HiSemicon - Datasheet Preview

Datasheet Details

Part number	SFD9N65
Manufacturer	HiSemicon
File Size	804.82 KB
Description	9A 650V N-CHANNEL MOSFET
Datasheet	SFD9N65 Datasheet

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9A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Features ◆VDS(V)=650V, ID=9A ◆RDS(ON) TYP:0.88Ω@VGS=10V ID=4.5A MAX:1.