SFD2006T
DESCRIPTION
The SFD2006T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES
- 60A,20V,RDS(on)(typ.)=5.6m@VGS=4.5V
- Excellent package for good heat dissipation
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- High density cell design for ultra low Rdson
- Special process technology for high ESD capability
TO-252-2L
ORDERING INFORMATION
Part No. SFD2006T
Package TO-252-2L
Marking SFD2006T
Material Pb free
ABSOLUTE MAXIMUM RATINGS TC = 25℃ unless otherwise noted
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current
TC = 25°C TC = 100°C
Drain Current Pulsed (Note 1)
Maximum Power Dissipation Operation Junction Temperature Range Storage Temperature Range Thermal Characteristics
Symbol VDS VGS
PD TJ Tstg
Ratings 20 ±12 60 42 220
65 -55～+150 -55～+150
Symbol
Parameter
RθJC
Thermal...
