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HSB772S - PNP EPITAXIAL PLANAR TRANSISTOR

Download the HSB772S datasheet PDF. This datasheet also covers the HSB772S_Hi variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HSB772S is designed for using in output stage of 0.75W amplifier, voltage regulator, DC-DC converter and driver.

Maximum Temperatures Storage Temperature -55 to +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Pow

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Note: The manufacturer provides a single datasheet file (HSB772S_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HSB772S
Manufacturer Hi-Sincerity Mocroelectronics
File Size 44.76 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HSB772S Datasheet

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Other Datasheets by Hi-Sincerity Mocroelectronics

Part Number Description
HSB772 PNP EPITAXIAL PLANAR TRANSISTOR
HSB764 PNP EPITAXIAL PLANAR TRANSISTOR
HSB1109 PNP EPITAXIAL PLANAR TRANSISTOR
HSB1109S PNP EPITAXIAL PLANAR TRANSISTOR
HSB1426 PNP EPITAXIAL PLANAR TRANSISTOR

Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6549 Issued Date : 1992.11.25 Revised Date : 2002.05.08 Page No. : 1/4 HSB772S PNP EPITAXIAL PLANAR TRANSISTOR Description The HSB772S is designed for using in output stage of 0.75W amplifier, voltage regulator, DC-DC converter and driver. Absolute Maximum Ratings TO-92 • Maximum Temperatures Storage Temperature .......................................................................................... -55 to +150 °C Junction Temperature.................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ...............................................................................
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