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HI-SINCERITY
MICROELECTRONICS CORP.
HMBTA94
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HN200209 Issued Date : 2000.11.01 Revised Date : 2004.08.17 Page No. : 1/4
Description
The HMBTA94 is designed for application that requires high voltage.
Features
• High Breakdown Voltage: VCEO=400(Min.) at IC=1mA • Complementary to HMBTA44
SOT-23
Absolute Maximum Ratings
• Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum
• Maximum Power Dissipation Total Power Dissipation (TA=25°C) .....................................