Datasheet4U Logo Datasheet4U.com

HJ3669 - NPN TRANSISTOR

Download the HJ3669 datasheet PDF. This datasheet also covers the HJ3669_Hi variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HJ3669 is designed for using in power amplifier applications, power switching application.

Maximum Temperatures Tstg Storage Temperature -55 ~ +150 °C Tj Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipa

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HJ3669_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HJ3669
Manufacturer Hi-Sincerity Mocroelectronics
File Size 89.45 KB
Description NPN TRANSISTOR
Datasheet download datasheet HJ3669 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Hi-Sincerity Mocroelectronics

Part Number Description
HJ3055 NPN EPITAXIAL PLANAR TRANSISTOR
HJ31C NPN TRANSISTOR
HJ32C PNP TRANSISTOR
HJ340 NPN TRANSISTOR
HJ350 PNP TRANSISTOR

Full PDF Text Transcription

Click to expand full text
HI-SINCERITY MICROELECTRONICS CORP. HJ3669 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6029 Issued Date : 1997.10.24 Revised Date : 2008.04.09 Page No. : 1/4 Description The HJ3669 is designed for using in power amplifier applications, power switching application. Absolute Maximum Ratings (TA=25°C) TO-252 • Maximum Temperatures Tstg Storage Temperature................................................................................................................... -55 ~ +150 °C Tj Junction Temperature ............................................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (TA=25°C) .....................................................................................
Published: |