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HJ3055 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HJ3055 datasheet PDF. This datasheet also covers the HJ3055_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HJ3055 is designed for general purpose of amplifier and switching applications.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipation (TC=25°C) 20

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Note: The manufacturer provides a single datasheet file (HJ3055_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HJ3055
Manufacturer Hi-Sincerity Mocroelectronics
File Size 89.34 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HJ3055 Datasheet

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. HJ3055 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6004 Issued Date : 1994.10.04 Revised Date : 2008.04.09 Page No. : 1/4 Description The HJ3055 is designed for general purpose of amplifier and switching applications. Absolute Maximum Ratings (TA=25°C) TO-252 • Maximum Temperatures Storage Temperature .......................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (TC=25°C) ............................................................................................
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