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HJ2955 - PNP EPITAXIAL PLANAR TRANSISTOR

Download the HJ2955 datasheet PDF. This datasheet also covers the HJ2955_Hi variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HJ2955 is designed for general purpose of amplifier and switching applications.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Tc=25°C

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Note: The manufacturer provides a single datasheet file (HJ2955_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HJ2955
Manufacturer Hi-Sincerity Mocroelectronics
File Size 37.17 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HJ2955 Datasheet

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Other Datasheets by Hi-Sincerity Mocroelectronics

Part Number Description
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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6003 Issued Date : 1994.10.04 Revised Date : 2002.04.03 Page No. : 1/4 HJ2955 PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ2955 is designed for general purpose of amplifier and switching applications. Absolute Maximum Ratings (Ta=25°C) TO-252 • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ...................................................................................... 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Tc=25°C)..................................................................................... 20 W • Maximum Voltages and Currents BVCBO Collector to Base Voltage........
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