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HJ210 - PNP EPITAXIAL PLANAR TRANSISTOR

Download the HJ210 datasheet PDF. This datasheet also covers the HJ210_Hi variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HJ210 is designed for low voltage, low-power, high-gain audio amplifier applications.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 12.5 W

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HJ210_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HJ210
Manufacturer Hi-Sincerity Mocroelectronics
File Size 23.32 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HJ210 Datasheet

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6011-B Issued Date : 1996.03.12 Revised Date : 2000.11.01 Page No. : 1/2 HJ210 PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ210 is designed for low voltage, low-power, high-gain audio amplifier applications. Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) ................................................................................. 12.5 W • Maximum Voltages and Currents BVCBO Collector to Base Voltage ...
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