Datasheet4U Logo Datasheet4U.com

HIRF840F - N-Channel Power MOSFET

This page provides the datasheet information for the HIRF840F, a member of the HIRF840_Hi N-Channel Power MOSFET family.

Datasheet Summary

Description

This N - Channel MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.

Features

  • Dynamic dv/dt Rating.
  • Repetitive Avalanche Rated.
  • Fast Switching.
  • Ease of Paralleling.
  • Simple Drive Requirements Thermal Characteristics Symbol Parameter RθJC Thermal Resistance Junction to Case Max. RθJA Thermal Resistance Junction to Ambient Max. Value TO-220AB 1.71 TO-220FP 3.3 62 Units °C/W °C/W HIRF840 Series Pin Assignment Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source 123 3-Lead Plastic T.

📥 Download Datasheet

Datasheet preview – HIRF840F

Datasheet Details

Part number HIRF840F
Manufacturer Hi-Sincerity Mocroelectronics
File Size 47.13 KB
Description N-Channel Power MOSFET
Datasheet download datasheet HIRF840F Datasheet
Additional preview pages of the HIRF840F datasheet.
Other Datasheets by Hi-Sincerity Mocroelectronics

Full PDF Text Transcription

Click to expand full text
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200505 Issued Date : 2005.06.01 Revised Date : 2005.06.08 Page No. : 1/4 HIRF840 / HIRF840F N-CHANNEL POWER MOSFET Description This N - Channel MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. Features • Dynamic dv/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements Thermal Characteristics Symbol Parameter RθJC Thermal Resistance Junction to Case Max. RθJA Thermal Resistance Junction to Ambient Max. Value TO-220AB 1.71 TO-220FP 3.
Published: |