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HIRF730F - N-CHANNEL POWER MOSFET

This page provides the datasheet information for the HIRF730F, a member of the HIRF730_Hi N-CHANNEL POWER MOSFET family.

Datasheet Summary

Description

Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Features

  • Dynamic dv/dt Rating.
  • Repetitive Avalanche Rated.
  • Fast Switching.
  • Ease of Paralleling.
  • Simple Drive Requirements 1 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source 3 2 Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance Junction to Case Max. Thermal Resistance Junction to Ambient Max. Value TO-220AB TO-220FP 62 1.71 3.3 Units °C/W °C/W HIRF730 Series Symbol D G S Absolute Maximum Ratings Symbol VDS.

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Datasheet preview – HIRF730F

Datasheet Details

Part number HIRF730F
Manufacturer Hi-Sincerity Mocroelectronics
File Size 81.19 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet HIRF730F Datasheet
Additional preview pages of the HIRF730F datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200406 Issued Date : 2004.10.01 Revised Date : 2005.04.22 Page No. : 1/4 HIRF730 / HIRF730F N-CHANNEL POWER MOSFET HIRF730 Series Pin Assignment Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Description Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. www.DataSheet4U.
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