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HI112 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HI112 datasheet PDF. This datasheet also covers the HI112_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HI112 is designed for use in general purpose amplifier and lowspeed switching applications.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum Maximum Power Dissipation Total Power Dissipat

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Note: The manufacturer provides a single datasheet file (HI112_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HI112
Manufacturer Hi-Sincerity Mocroelectronics
File Size 70.50 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HI112 Datasheet

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9033 Issued Date : 1998.07.01 Revised Date : 2002.01.11 Page No. : 1/4 HI112 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI112 is designed for use in general purpose amplifier and lowspeed switching applications. Absolute Maximum Ratings (Ta=25°C) TO-251 • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ...................................................................................... 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) .....................................................................................
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