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HI1109 - PNP EPITAXIAL PLANAR TRANSISTOR

Download the HI1109 datasheet PDF. This datasheet also covers the HI1109_Hi variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

Low frequency high voltage amplifier Complementary pair with HI1609 Absolute Maximum Ratings (Ta=25°C) Maximum Temperatures Storage Temperature -55~+150 °C Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 1.25 W

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Note: The manufacturer provides a single datasheet file (HI1109_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HI1109
Manufacturer Hi-Sincerity Mocroelectronics
File Size 59.04 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HI1109 Datasheet

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Other Datasheets by Hi-Sincerity Mocroelectronics

Part Number Description
HI112 NPN EPITAXIAL PLANAR TRANSISTOR
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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9019-B Issued Date : 1996.04.15 Revised Date : 2000.11.01 Page No. : 1/3 HI1109 PNP EPITAXIAL PLANAR TRANSISTOR Description • Low frequency high voltage amplifier • Complementary pair with HI1609 Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature ............................................................................................. -55~+150 °C Junction Temperature .................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ................................................................................. 1.25 W • Maximum Voltages and Currents BVCBO Collector to Base Voltage .....................
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