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HBC858 - PNP EPITAXIAL PLANAR TRANSISTOR

Download the HBC858 datasheet PDF. This datasheet also covers the HBC858_Hi variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HBC858 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Power Dissipation

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Note: The manufacturer provides a single datasheet file (HBC858_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HBC858
Manufacturer Hi-Sincerity Mocroelectronics
File Size 38.98 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HBC858 Datasheet

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Other Datasheets by Hi-Sincerity Mocroelectronics

Part Number Description
HBC856 PNP EPITAXIAL PLANAR TRANSISTOR
HBC857 PNP EPITAXIAL PLANAR TRANSISTOR
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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. HBC858 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6851 Issued Date : 1994.09.02 Revised Date : 2004.09.01 Page No. : 1/4 Description The HBC858 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. Absolute Maximum Ratings SOT-23 • Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature.................................................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (TA=25°C).....................................................
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