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HBC817 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HBC817 datasheet PDF. This datasheet also covers the HBC817_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HBC817 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages.

Maximum Temperatures Storage Temperature -55 to +150 °C Junction Temperature +150 °C Maximum Power Dissipation Total Po

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Note: The manufacturer provides a single datasheet file (HBC817_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HBC817
Manufacturer Hi-Sincerity Mocroelectronics
File Size 66.15 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HBC817 Datasheet

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. HBC817 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6831 Issued Date : 1994.01.25 Revised Date : 2008.01.30 Page No. : 1/4 Description The HBC817 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages. Absolute Maximum Ratings SOT-23 • Maximum Temperatures Storage Temperature.......................................................................................................................... -55 to +150 °C Junction Temperature.................................................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (TA=25°C)...............................................................
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