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H4435S - P-Channel Enhancement-Mode MOSFET

Download the H4435S datasheet PDF. This datasheet also covers the H4435S_Hi variant, as both devices belong to the same p-channel enhancement-mode mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • RDS(on)=20mΩ@VGS=-10V, ID=-9.1A.
  • RDS(on)=35mΩ@VGS=-4.5V, ID=-6.9A.
  • Advanced trench process technology.
  • High Density Cell Design for Ultra Low On-Resistance 5 6 7 8 4 3 2 1 Pin 1 / 2 / 3: Source Pin 4: Gate Pin 5 / 6 / 7 / 8: Drain Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol VDS VGS ID IDM PD Tj, Tstg RθJA Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) Drain Current (Pulsed).
  • 1 o Parameter Ratings -30 ±20 -9.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H4435S_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H4435S
Manufacturer Hi-Sincerity Mocroelectronics
File Size 170.63 KB
Description P-Channel Enhancement-Mode MOSFET
Datasheet download datasheet H4435S Datasheet

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200101) Issued Date : 2008.01.12 Revised Date :2009.02.06 Page No. : 1/5 H4435S P-Channel Enhancement-Mode MOSFET (-30V, -9.1A) • 8-Lead Plastic SO-8 Package Code: S H4435S Symbol & Pin Assignment Features • RDS(on)=20mΩ@VGS=-10V, ID=-9.1A • RDS(on)=35mΩ@VGS=-4.5V, ID=-6.9A • Advanced trench process technology • High Density Cell Design for Ultra Low On-Resistance 5 6 7 8 4 3 2 1 Pin 1 / 2 / 3: Source Pin 4: Gate Pin 5 / 6 / 7 / 8: Drain Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol VDS VGS ID IDM PD Tj, Tstg RθJA Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) Drain Current (Pulsed) *1 o Parameter Ratings -30 ±20 -9.1 -50 2.
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